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? IRF9530NSPBF irf9530nlpbf v dss -100v r ds(on) 0.20 ?? i d -14a 1 2016-5-27 ? symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ -10v ? -14 a i d @ t c = 100c continuous drain current, v gs @ -10v ? -10 i dm pulsed drain current ?? -56 p d @t a = 25c maximum power dissipation 3.8 w p d @t c = 25c maximum power dissipation 79 w linear derating factor 0.53 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy (thermally limited) ?? 250 mj i ar avalanche current ? -8.4 a e ar repetitive avalanche energy ? 7.9 mj dv/dt peak diode recovery dv/dt ?? -5.0 v/ns t j operating junction and -55 to + 175 ? t stg storage temperature range c ? soldering temperature, for 10 seconds (1.6mm from case) 300 ? mounting torque, 6-32 or m3 screw 10 lbf?in (1.1n?m) ? absolute maximum ratings thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ??? 1.9 c/w r ? ja junction-to-ambient ( pcb mount, steady state) ? ??? 40 d2 pak IRF9530NSPBF g d s gate drain source benefits ? advanced process technology ? surface mount (irf9530ns) ? low-profile through-hole(irf9530nl) ? 175c operating temperature ? fast switching ? p-channel ? fully avalanche rated ? lead-free description fifth generation hexfet? power mosfets from international rectifier utilize advanced proces sing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d2pak is a surface mount power package capable of accommodating die sizes up to hex- 4. it provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. the d2pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. the through-hole version (irf9530nl) is available for low- profile applications. s d g s d g d to-262 pak irf9530nlpbf base part number package type standard pack form quantity irf9530nlpbf to-262 tube 50 irf9530nlpbf ( obsolete) IRF9530NSPBF d2-pak tape and reel left 800 irf9530nstrlpbf orderable part number hexfet ? power mosfet
? irf9530ns/lpbf 2 2016-5-27 notes: ? ? repetitive rati ng; pulse width limited by max. junction temperature. (see fig. 11) ? starting t j = 25c, l = 7.0mh, r g = 25 ? , i as = -8.4a. (see fig. 12) ? i sd ?? -8.4a, di/dt ?? -490a/s, v dd ?? v (br)dss , t j ? 175c. ? pulse width ?? 300s; duty cycle ? 2%. ? uses irf9530n data and test conditions. ?? when mounted on 1" square pcb (fr-4 or g-10 material). fo r recommended footprint and soldering techniques refer to application note #an-994 electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -100 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.11 ??? v/c reference to 25c, i d = -1ma ? r ds(on) static drain-to-source on-resistance ??? ??? 0.20 ??? v gs = -10v, i d = -8.4a ? v gs(th) gate threshold voltage -2.0 ??? -4.0 v v ds = v gs , i d = -250a gfs forward trans conductance 3.2 ??? ??? s v ds = -50v, i d = -8.4a ? i dss drain-to-source leakage current ??? ??? -25 a v ds = -100v, v gs = 0v ??? ??? -250 v ds = -80v,v gs = 0v,t j =150c i gss gate-to-source forwar d leakage ??? ??? -100 na v gs = -20v gate-to-source reverse leakage ??? ??? 100 v gs = 20v q g total gate charge ??? ??? 58 nc ? i d = -8.4a q gs gate-to-source charge ??? ??? 8.3 v ds = -80v q gd gate-to-drain charge ??? ??? 32 v gs = -10v see fig.6 and 13 ?? t d(on) turn-on delay time ??? 15 ??? ns v dd = -50v t r rise time ??? 58 ??? i d = -8.4a t d(off) turn-off delay time ??? 45 ??? r g = 9.1 ?? t f fall time ??? 46 ??? r d = 6.2 ?? see fig.6 ?? l s internal source inductance ??? 7.5 ??? nh ? between lead, and center of die contact c iss input capacitance ??? 760 ??? v gs = 0v c oss output capacitance ??? 260 ??? v ds = -25v c rss reverse transfer capacitance ??? 170 ??? ? = 1.0mhz, see fig. 5 ?? source-drain ratings and characteristics parameter min. typ. max. units conditions i s continuous source current ??? ??? -14 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? -56 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? -1.6 v t j = 25c,i s = -8.4a,v gs = 0v ?? t rr reverse recovery time ??? 130 190 ns t j = 25c ,i f = -8.4a q rr reverse recovery charge ??? 650 970 nc di/dt = -100a/s ??? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) pf ?
? irf9530ns/lpbf 3 2016-5-27 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 4 normalized on-resistance vs. temperature fig. 1 typical output characteristics
? irf9530ns/lpbf 4 2016-5-27 fig 5. typical capacitance vs. drain-to-source voltage ? fig 8. maximum safe operating area fig. 7 typical source-to-drain diode forward voltage fig 6. typical gate charge vs. gate-to-source voltage
? irf9530ns/lpbf 5 2016-5-27 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit fig 10b. switching time waveforms
? irf9530ns/lpbf 6 2016-5-27 fig 12c. maximum avalanche energy vs. drain current fig 12a. unclamped inductive test circuit fig 12b. unclamped inductive waveforms fig 13b. gate charge test circuit fig 13a. gate charge waveform
? irf9530ns/lpbf 7 2016-5-27 ? fig 14. peak diode recovery dv/dt test circuit for pchannel hexfet? power mosfets
? irf9530ns/lpbf 8 2016-5-27 ? note: for the most current drawing please refer to infineon?s web site www.infineon.com d2-pak (to-263ab) part marking information d2-pak (to-263ab) package outline (dimensions are shown in millimeters (inches)) date code year 0 = 2000 week 02 a = assembly site code rectifier international part number p = designates lead - free product (optional) f530s in the assembly line "l" assembled on ww 02, 2000 this is an irf530s with lot code 8024 international logo rectifier lot code assembly year 0 = 2000 part number date code line l week 02 or f530s logo assembly lot code
? irf9530ns/lpbf 9 2016-5-27 to-262 part marking information to-262 package outline (dimensions are shown in millimeters (inches) note: for the most current drawing please refer to infineon?s web site www.infineon.com logo recti fi er international lot code assembly logo recti fi er international date code week 19 year 7 = 1997 part number a = assembly site code or product (optional) p = designates lead-free example: this is an irl3103l lot code 1789 assembly part number date code week 19 line c lot code year 7 = 1997 assembled on ww 19, 1997 in the assembly line "c"
? irf9530ns/lpbf 10 2016-5-27 d2-pak (to-263ab) tape & reel information (dimensions are shown in millimeters (inches)) note: for the most current drawing please refer to infineon?s web site www.infineon.com 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.
? irf9530ns/lpbf 11 2016-5-27 ? revision history date comments 5/27/2016 ?? updated datasheet with corporate template. ?? added disclaimer on last page. ?? to-262 package was removed from ordering information since it is eol on page 1. qualification information ? ? qualification level ? industrial (per jedec jesd47f) ?? d2-pak msl1 (per jedec j-std-020d) ?? to-262 n/a rohs compliant yes moisture sensitivity level ? qualification standards can be found at in neon?s ? web ? site? www.in neon.com ?? applicable version of jedec standar d at the time of product release. trademarks ? of ? in neon ? technologies ? ag ? hvic?, ? ipm?, ? pfc?, ? au \ convertir?, ? aurix?, ? c166?, ? canpak?, ? cipos?, ? cipurse?, ? cooldp?, ? coolgan?, ? coolir?, ? coolmos?, ? coolset?, ? coolsic?, ? dave?, ? di \ pol?, ? directfet?, ? drblade?, ? easypim?, ? econobridge?, ? econodual?, ? econopack?, ? econopim?, ? eicedriver?, ? eupec?, ? fcos?, ? ganpowir?, ? hexfet?, ? hitfet?, ? hybridpack?, ? imotion?, ? iram?, ? isoface?, ? isopack?, ? ledrivir?, ? litix?, ? mipaq?, ? modstack?, ? my\ d?, ? novalithic?, ? optiga?, ? op mos?, ? origa?, ? powiraudio?, ? powirstage?, ? primepack?, ? pr imestack?, ? profet?, ? pro \ sil?, ? rasic?, ? real3?, ? smar tlewis ?, ? solid ? flash?, ? spoc?, ? strongirfet?, ? supirbuck?, ? tempfet?,? trenchstop?, ? tricore?, ? uhvic?, ? xhp?, ? xmc? ? ? trademarks ? updated ? november ? 2015 ? ? other ?trademarks ? all ? referenced ? product ? or ? service ? names ? and ? trademarks ? are ? the ? property ? of ? their ? respec ve ? owners. ? ?edi on ? 2016 \ 04 \ 19? published ? by ? in neon ?technologies ?ag ? 81726 ? munich, ? germany ? ?? ? ? 2016 ?in neon ? technologies ?ag.? all ?rights ? reserved. ? ?? do ?you ? have ?a ? ques on ? about ?this ? document? ? email: ? erratum@in neon.com ? ? document ? reference ? ifx1 ? important ? notice ? the ? informa on ?given ?in ?this ?document ?shall ?in ? no ? event ?be ? reg a rd ed ?as ?a ?guarantee ?of ? condi ons ? or ? characteris cs ?? (?bescha ? enheitsgaran e?) ?. ? ?? with ? respect ? to ? any ? examples, ? hints ? or ? any ? typical ? values ? stated ? herein ? and/or ? any ? informa on ? regarding ? the ? applica on ? of ? the ? product, ? in neon ? technologies ? hereby ? disclaims ? any ? and? all ? warran es ? and ? liabili es ? of ? any ? kind, ? including ? without ? lim ita on ? war ran es ? of ? non \ infringement ? of ? intellectual ?property ? rights ?of ?any ? third ?party. ? ?? in ? addi on, ? any ? informa on ? given? in ? this ? document ? is ? subject ? to ? customer?s ? compliance ? with ? its ? obliga ons ? stated ? in ? this ? document ? and? any ? applicable ? legal ? requirements, ? norms ? and ? standards? conce r n ing ? customer?s ? products ? and ? any ? use ? of ? the ? product ? of ? in neon ? technologies ? in ? customer?s ? applica ons. ? ?? the ? data ? contained ? in ? this ? document ? is ? exclusively ? intended ? for ? technically ? trained ? sta? . ? it ? is ? the ? responsibility ?of ? customer?s ? technical ? departments ? to ? evaluate ? the ? suitability ? of ? the ? product ? for ? the ? intended ? applic a on ? and ? the ? completeness ? of ? the ? product ? informa on ? given? in ? this ? document ? with ? respect ?to ?such ? applicaon. ? ?? for ? further ? informa on ? on ? the ? product, ? technology, ? delivery ? terms ? and ? condi ons ? and ? prices ? please ? contact ? your ? nearest ? in neon ? technologies ? o ? ce? ( www.in neon.com ). ? ? ?please ? note ? that ? this ? product ? is ? not ? quali ed ? accordi n g ? to ? the ? ae c ? q100 ? or ? aec ? q101 ? documents ? of ?the ?automo ve ? electronics ? council. ?? warnings ? ?due ? to ? technical ? requirements ? products ? may ? contain ? dangerous ? substances. ? for ? informa on ? on ? the ? types ? in ? ques on ? please ? contact ? your ? nearest ? in neon ? technologies?o ? ce . ?? ? except ? as ? otherwise ? explic itly ? approved ? by ? in neon ? technologies ? in ? a ? wri en ? do cument ? signed ? by ? authorized ? representa ves? of ? in neon ? technologies, ? in neon ? technologies? ? products ? may ? not ? be ? used ? in ? any ? applica ons ? where ? a ? failure ? of ? the ? product ? or ? any ? consequences ? of ? the ? use ? thereof ? can ? reasonably ? be ?expected ?to ?re sult ? in ? personal ? injury. ?? ?? ?? ??

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